Open positions
We are looking for encouraged and self-motivated persons, who will enjoy the team spirit of a dynamic interdisciplinary research group. Outstanding early stage researchers (ESR) and experienced researchers (ER) candidates must hold a Master/Diploma degree or a PhD, respectively. Strong applicants will be considered regardless of specific experience. We particularly encourage candidates from underrepresented minorities to apply.
Please note that applications are only possible via our online application portal.
B. Positions for Experienced reserachers (ER)
ER#1 — Functional III-N nanowire device structures
Host institution: Georg-August-Universität Göttingen, Germany
Start: July 2011 (duration 24 months)
Contact: Prof. Dr. Angela Rizzi and Dr. Jörg Malindretos 
We are seeking applicants for a Post Doc position in the area of experimental condensed matter physics and nanotechnology. All scientific workpackages within the network will develop concepts for functional structures, as e.g. light emitting diodes based on single nanowires and field effect transistor devices for sensing applications. In particular the work package "nanowires for optoelectronics" focuses on the InGaN/GaN nanowires structures and their implementation in nanoscale optoelectronic devices.
The ER at the UGOE will be concerned with the design of the structures and their physical properties as well as with their fabrication and characterization. The main focus will be on the material system GaN, InN and related compounds. Experience in semiconductor nanostructure fabrication and characterization will be very valuable.
ER#4 — AFM measurements of piezo nanowire devices
Host institution: Consiglio Nazionale delle Ricerche, Parma, Italy
Start: January 2012 (duration 6 months)
Contact: Dr. Franca Albertini and Dr. Lucia Nasi
The six-months Post Doctoral position will focus on the morphological, elastic and electrical characterization of nanowires by scanning probe techniques, in the framework of different workpackages, with focus on sensing and energy harvesting applications. The candidates must hold a PhD in Physics or Chemistry or Material Science or a related field. Long-working experience in atomic force microscopy (AFM) at the nano-scale, both in contact and tapping mode, is required. Experience in electrical measurements and in scanning probe microscopy (SPM) methods (e.g.) nanomanipulation, electrically-based techniques are appreciated.
ER#5 — Transfer of optimised InGaN NW process to production MOCVD
Host institution:Aixtron AG, Herzogenrath, Germany
Start: June 2013 (duration 12 months)
Contact: Dr. Christoph Giesen
We are seeking applicants for a Post Doc position in the area of electrical engineering. In the work package "nanowires for optoelectronics" the focus is on the growth optimization of InGaN/GaN nanowires with respect to their optical emission properties and their implementation in nanoscale optoelectronic devices.
Based on the process development of the ESR the ER will be in charge of (i) the transfer of optimised deposition processes for InGaN based nanowires from R&D to production type MOCVD equipment; (ii) the correlation of process results with MOCVD equipment design and (iii) the development of concepts to optimised production type MOCVD equipment for the deposition of Nitride based nanostructures.